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|Title:||Activation of beryllium-implanted GaN by two-step annealing||Authors:||Sun, Y.
|Issue Date:||2000||Citation:||Sun, Y.,Tan, L.S.,Chua, S.J.,Prakash, S. (2000). Activation of beryllium-implanted GaN by two-step annealing. MRS Internet Journal of Nitride Semiconductor Research 5 (SUPPL. 1) : -. ScholarBank@NUS Repository.||Abstract:||For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm-2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ∼ 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.||Source Title:||MRS Internet Journal of Nitride Semiconductor Research||URI:||http://scholarbank.nus.edu.sg/handle/10635/114539||ISSN:||10925783|
|Appears in Collections:||Staff Publications|
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