Please use this identifier to cite or link to this item:
Title: Activation of beryllium-implanted GaN by two-step annealing
Authors: Sun, Y.
Tan, L.S. 
Chua, S.J. 
Prakash, S. 
Issue Date: 2000
Citation: Sun, Y.,Tan, L.S.,Chua, S.J.,Prakash, S. (2000). Activation of beryllium-implanted GaN by two-step annealing. MRS Internet Journal of Nitride Semiconductor Research 5 (SUPPL. 1) : -. ScholarBank@NUS Repository.
Abstract: For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1×1013 cm-2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ∼ 100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.
Source Title: MRS Internet Journal of Nitride Semiconductor Research
ISSN: 10925783
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.