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|Title:||AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process||Authors:||Liu, X.
|Issue Date:||Jun-2012||Citation:||Liu, X., Zhan, C., Chan, K.W., Liu, W., Tan, L.S., Chen, K.J., Yeo, Y.-C. (2012-06). AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free process. Applied Physics Express 5 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/APEX.5.066501||Abstract:||This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-todrain L GD spacing of 5 μm achieved an off-state breakdown voltage VBR of 800 V and an on-state resistance R on of 3mΩ.cm 2. In addition, subthreshold swing S of ∼97 mV/decade and I on=I off ratio of ∼10 6 were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing L GD of less than 10 μm, the V BR achieved in this work is the highest. © 2012 The Japan Society of Applied Physics.||Source Title:||Applied Physics Express||URI:||http://scholarbank.nus.edu.sg/handle/10635/81944||ISSN:||18820778||DOI:||10.1143/APEX.5.066501|
|Appears in Collections:||Staff Publications|
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