Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2015.02.139
Title: Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation
Authors: Liu, X.
Liu, Z. 
Pannirselvam, S. 
Pan, J.
Liu, W.
Jia, F.
Lu, Y.
Liu, C.
Yu, W.
He, J.
Tan, L.S. 
Issue Date: 2015
Publisher: Elsevier
Citation: Liu, X., Liu, Z., Pannirselvam, S., Pan, J., Liu, W., Jia, F., Lu, Y., Liu, C., Yu, W., He, J., Tan, L.S. (2015). Band alignment of HfAlO/GaN (0 0 0 1) determined by X-ray photoelectron spectroscopy: Effect of in situ SiH4 passivation. Journal of Alloys and Compounds 636 : 191-195. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2015.02.139
Source Title: Journal of Alloys and Compounds
URI: http://scholarbank.nus.edu.sg/handle/10635/128133
ISSN: 09258388
DOI: 10.1016/j.jallcom.2015.02.139
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