AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process

Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210119

Title:	AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
Authors:	Liu, X. Zhan, C. Chan, K.W. Liu, W. Tan, L.S. Teo, K.L. Chen, K.J. Yeo, Y.-C.
Issue Date:	2012
Citation:	Liu, X.,Zhan, C.,Chan, K.W.,Liu, W.,Tan, L.S.,Teo, K.L.,Chen, K.J.,Yeo, Y.-C. (2012). AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSI-TSA.2012.6210119
Abstract:	AlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. R on of 3 mΩ.cm 2 was obtained. Breakdown voltage V BR of 800 V was achieved, the highest for L GD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts. © 2012 IEEE.
Source Title:	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/83450
ISBN:	9781457720840
ISSN:	19308868
DOI:	10.1109/VLSI-TSA.2012.6210119
Appears in Collections:	Staff Publications

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