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Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSI-TSA.2012.6210119
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dc.titleAlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process
dc.contributor.authorLiu, X.
dc.contributor.authorZhan, C.
dc.contributor.authorChan, K.W.
dc.contributor.authorLiu, W.
dc.contributor.authorTan, L.S.
dc.contributor.authorTeo, K.L.
dc.contributor.authorChen, K.J.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:41:22Z
dc.date.available2014-10-07T04:41:22Z
dc.date.issued2012
dc.identifier.citationLiu, X.,Zhan, C.,Chan, K.W.,Liu, W.,Tan, L.S.,Teo, K.L.,Chen, K.J.,Yeo, Y.-C. (2012). AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free process. International Symposium on VLSI Technology, Systems, and Applications, Proceedings : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSI-TSA.2012.6210119" target="_blank">https://doi.org/10.1109/VLSI-TSA.2012.6210119</a>
dc.identifier.isbn9781457720840
dc.identifier.issn19308868
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83450
dc.description.abstractAlGaN/GaN MOS-HEMTs on a silicon platform were realized using a CMOS-compatible gold-free process. Process modules commonly used in CMOS were used, including gate stack formation, etching modules, etc. R on of 3 mΩ.cm 2 was obtained. Breakdown voltage V BR of 800 V was achieved, the highest for L GD below 10 μm for AlGaN/GaN/Si MOS-HEMTs fabricated using a gold-free process. The devices could be generally useful for cost-competitive power switching circuits with supply voltage in the range of several hundred volts. © 2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/VLSI-TSA.2012.6210119
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/VLSI-TSA.2012.6210119
dc.description.sourcetitleInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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