Please use this identifier to cite or link to this item:
|Title:||Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs||Authors:||Liu, F.
|Keywords:||Germanium (Ge) enrichment
Laser annealing (LA)
|Issue Date:||Aug-2008||Citation:||Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C. (2008-08). Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs. IEEE Electron Device Letters 29 (8) : 885-888. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001029||Abstract:||We report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si0.8Ge0.2 S/D region, leading to a graded SiGe S/ D stressor with a significant increase in the peak Ge content. Various laser fluences were investigated for the laser annealing process. The process is then successfully integrated in a device fabrication flow, forming strained silicon-on-insulator p-channel field-effect transistors (p-FETs) with a high Ge content in SiGe S/D. A drive current enhancement of ∼12% was achieved with this process, as compared to a strained p-FET with Si0.8Ge0.2 p-FETs. The IDsat enhancement, primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate lengths. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82604||ISSN:||07413106||DOI:||10.1109/LED.2008.2001029|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 16, 2022
WEB OF SCIENCETM
checked on Jan 7, 2022
checked on Jan 13, 2022
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.