Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001029
Title: Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs
Authors: Liu, F.
Wong, H.-S.
Ang, K.-W.
Zhu, M. 
Wang, X.
Lai, D.M.-Y.
Lim, P.-C.
Yeo, Y.-C. 
Keywords: Germanium (Ge) enrichment
Laser annealing (LA)
Strained transistor
Issue Date: Aug-2008
Source: Liu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C. (2008-08). Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs. IEEE Electron Device Letters 29 (8) : 885-888. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001029
Abstract: We report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si0.8Ge0.2 S/D region, leading to a graded SiGe S/ D stressor with a significant increase in the peak Ge content. Various laser fluences were investigated for the laser annealing process. The process is then successfully integrated in a device fabrication flow, forming strained silicon-on-insulator p-channel field-effect transistors (p-FETs) with a high Ge content in SiGe S/D. A drive current enhancement of ∼12% was achieved with this process, as compared to a strained p-FET with Si0.8Ge0.2 p-FETs. The IDsat enhancement, primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate lengths. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82604
ISSN: 07413106
DOI: 10.1109/LED.2008.2001029
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