Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2001029
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dc.titleLaser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs
dc.contributor.authorLiu, F.
dc.contributor.authorWong, H.-S.
dc.contributor.authorAng, K.-W.
dc.contributor.authorZhu, M.
dc.contributor.authorWang, X.
dc.contributor.authorLai, D.M.-Y.
dc.contributor.authorLim, P.-C.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:31:20Z
dc.date.available2014-10-07T04:31:20Z
dc.date.issued2008-08
dc.identifier.citationLiu, F., Wong, H.-S., Ang, K.-W., Zhu, M., Wang, X., Lai, D.M.-Y., Lim, P.-C., Yeo, Y.-C. (2008-08). Laser annealing of amorphous germanium on silicon-germanium source/drain for strain and performance enhancement in pMOSFETs. IEEE Electron Device Letters 29 (8) : 885-888. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2001029
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82604
dc.description.abstractWe report the first demonstration of a novel germanium-enrichment process for forming a silicon-germanium (SiGe) source/drain (S/D) stressor with a high Ge content. The process involves laser-induced local melting and intermixing of a Ge layer with an underlying Si0.8Ge0.2 S/D region, leading to a graded SiGe S/ D stressor with a significant increase in the peak Ge content. Various laser fluences were investigated for the laser annealing process. The process is then successfully integrated in a device fabrication flow, forming strained silicon-on-insulator p-channel field-effect transistors (p-FETs) with a high Ge content in SiGe S/D. A drive current enhancement of ∼12% was achieved with this process, as compared to a strained p-FET with Si0.8Ge0.2 p-FETs. The IDsat enhancement, primarily attributed to strain-induced mobility improvement, is found to increase with decreasing gate lengths. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2001029
dc.sourceScopus
dc.subjectGermanium (Ge) enrichment
dc.subjectLaser annealing (LA)
dc.subjectStrained transistor
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2001029
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue8
dc.description.page885-888
dc.description.codenEDLED
dc.identifier.isiut000258096000020
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