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https://doi.org/10.1109/LED.2007.914103
| Title: | A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET | Authors: | Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
Keywords: | Contact etch stop layer (CESL) Diamond-like carbon (DLC) Enhancement Pitch Strain Stress |
Issue Date: | Feb-2008 | Citation: | Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-02). A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET. IEEE Electron Device Letters 29 (2) : 192-194. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914103 | Abstract: | We report the integration of a new liner stressor comprising diamond-like carbon (DLC) film over a p-channel transistor. A high compressive stress of 6.5 GPa was achieved in a high-stress film with a thickness of 27 nm. A 74% enhancement in drive current was observed for the strained device with DLC liner as compared to a control device without DLC liner. Due to its much higher intrinsic stress value compared to conventional SiN films, a thinner DLC layer can induce comparable amount of stress in the transistor channel compared to a thicker SiN. The DLC material is a potential next-generation high-stress and low-permittivity liner stressor material suitable for application in transistors with aggressively scaled pitch dimensions. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/54254 | ISSN: | 07413106 | DOI: | 10.1109/LED.2007.914103 |
| Appears in Collections: | Staff Publications |
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