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Title: A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
Authors: Tan, K.-M.
Zhu, M. 
Fang, W.-W.
Yang, M.
Liow, T.-Y.
Lee, R.T.P. 
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Contact etch stop layer (CESL)
Diamond-like carbon (DLC)
Issue Date: Feb-2008
Citation: Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-02). A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET. IEEE Electron Device Letters 29 (2) : 192-194. ScholarBank@NUS Repository.
Abstract: We report the integration of a new liner stressor comprising diamond-like carbon (DLC) film over a p-channel transistor. A high compressive stress of 6.5 GPa was achieved in a high-stress film with a thickness of 27 nm. A 74% enhancement in drive current was observed for the strained device with DLC liner as compared to a control device without DLC liner. Due to its much higher intrinsic stress value compared to conventional SiN films, a thinner DLC layer can induce comparable amount of stress in the transistor channel compared to a thicker SiN. The DLC material is a potential next-generation high-stress and low-permittivity liner stressor material suitable for application in transistors with aggressively scaled pitch dimensions. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2007.914103
Appears in Collections:Staff Publications

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