Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.914103
Title: A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
Authors: Tan, K.-M.
Zhu, M. 
Fang, W.-W.
Yang, M.
Liow, T.-Y.
Lee, R.T.P. 
Hoe, K.M.
Tung, C.-H.
Balasubramanian, N.
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Contact etch stop layer (CESL)
Diamond-like carbon (DLC)
Enhancement
Pitch
Strain
Stress
Issue Date: Feb-2008
Source: Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-02). A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET. IEEE Electron Device Letters 29 (2) : 192-194. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914103
Abstract: We report the integration of a new liner stressor comprising diamond-like carbon (DLC) film over a p-channel transistor. A high compressive stress of 6.5 GPa was achieved in a high-stress film with a thickness of 27 nm. A 74% enhancement in drive current was observed for the strained device with DLC liner as compared to a control device without DLC liner. Due to its much higher intrinsic stress value compared to conventional SiN films, a thinner DLC layer can induce comparable amount of stress in the transistor channel compared to a thicker SiN. The DLC material is a potential next-generation high-stress and low-permittivity liner stressor material suitable for application in transistors with aggressively scaled pitch dimensions. © 2008 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/54254
ISSN: 07413106
DOI: 10.1109/LED.2007.914103
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

16
checked on Dec 5, 2017

WEB OF SCIENCETM
Citations

14
checked on Dec 5, 2017

Page view(s)

26
checked on Dec 11, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.