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|Title:||Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors||Authors:||Liow, T.-Y.
Multiple-gate transistor (MuGFET)
|Issue Date:||Jul-2008||Citation:||Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008-07). Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors. IEEE Electron Device Letters 29 (7) : 808-810. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000669||Abstract:||Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement. © 2008 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82414||ISSN:||07413106||DOI:||10.1109/LED.2008.2000669|
|Appears in Collections:||Staff Publications|
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