Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000669

Title:	Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
Authors:	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Balasubramanian, N. Yeo, Y.-C.
Keywords:	Compliance FinFET Germanium Multiple-gate transistor (MuGFET) Strain Stress
Issue Date:	Jul-2008
Citation:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008-07). Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors. IEEE Electron Device Letters 29 (7) : 808-810. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000669
Abstract:	Pure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement. © 2008 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82414
ISSN:	07413106
DOI:	10.1109/LED.2008.2000669
Appears in Collections:	Staff Publications

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