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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000669
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dc.titleGermanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorZhu, M.
dc.contributor.authorTan, B.L.-H.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:07Z
dc.date.available2014-10-07T04:29:07Z
dc.date.issued2008-07
dc.identifier.citationLiow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008-07). Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors. IEEE Electron Device Letters 29 (7) : 808-810. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000669
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82414
dc.description.abstractPure germanium (Ge) source and drain (S/D) stressors are integrated with ultrathin-body (UTB) and nanowire field-effect transistors (FETs). This is the first report of the integration of Ge S/D stressors in FETs. The Ge S/D stressors induce a large compressive stress in the channel, resulting in up to 80% IDsat enhancement in UTB-FETs. Electrical results further show that increased substrate compliance effects allow nanowire FETs to achieve even higher levels (96%) of strain-induced enhancement. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2000669
dc.sourceScopus
dc.subjectCompliance
dc.subjectFinFET
dc.subjectGermanium
dc.subjectMultiple-gate transistor (MuGFET)
dc.subjectStrain
dc.subjectStress
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2000669
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue7
dc.description.page808-810
dc.description.codenEDLED
dc.identifier.isiut000257626000048
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