Please use this identifier to cite or link to this item:
https://doi.org/10.1109/VLSIT.2008.4588550
Title: | A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement | Authors: | Liu, F. Wong, H.-S. Ang, K.-W. Zhu, M. Wang, X. Lai, D.M.-Y. Lim, P.-C. Tan, B.L.H. Tripathy, S. Oh, S.-A. Samudra, G.S. Balasubramanian, N. Yeo, Y.-C. |
Issue Date: | 2008 | Citation: | Liu, F.,Wong, H.-S.,Ang, K.-W.,Zhu, M.,Wang, X.,Lai, D.M.-Y.,Lim, P.-C.,Tan, B.L.H.,Tripathy, S.,Oh, S.-A.,Samudra, G.S.,Balasubramanian, N.,Yeo, Y.-C. (2008). A new source/drain germanium-enrichment process comprising Ge deposition and laser-induced local melting and recrystallization for P-FET performance enhancement. Digest of Technical Papers - Symposium on VLSI Technology : 26-27. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2008.4588550 | Abstract: | We report for the first time a new process technology for boosting the Ge content in SiGe source/drain (S/D) stressors to increase strain and performance levels in p-FETs. By laser-induced local melting and intermixing of an amorphous Ge layer with an underlying Si0.8Ge0.2 S/D region, a graded SiGe S/D stressor is formed upon recrystallization. Peak Ge content in the graded SiGe S/D is doubled over the as-grown film. Raman analysis confirmed the retention of high S/D strain levels due to the rapid non-equilibrium recrystallization process. The new process technology developed here employs several simple additional steps, including amorphous Ge deposition and laser anneal (LA). For a p-FET with Ge enriched S/D, 21% and 12% IDsat enhancement at a fixed IOFF of 2 × 10-8 A/μm is observed over control p-FETs with Si0.8Ge0.2 S/D formed by RTA and LA, respectively. © 2008 IEEE. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/83390 | ISBN: | 9781424418053 | ISSN: | 07431562 | DOI: | 10.1109/VLSIT.2008.4588550 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.