Please use this identifier to cite or link to this item:
|Title:||Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor||Authors:||Tan, K.-M.
|Issue Date:||25-Apr-2008||Citation:||Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Zhu, M., Hoe, K.-M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-04-25). Novel extended-Pi shaped silicon - germanium source/drain stressors for strain and performance enhancement in p-channel tri-gate fin-type field-effect transistor. Japanese Journal of Applied Physics 47 (4 PART 2) : 2589-2592. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2589||Abstract:||Strained p-channel tri-gate fin-type field-effect transistor (FinFET) with extended-Pi (e∏) shaped SiGe source/drain (S/D) is demonstrated with enhanced drive current performance of 33% at a fixed drain induced barrier lowering (DIBL) over FinFET with ∏-SiGe S/D. The e∏ S/D stressor structure can be easily formed by simply using a longer HF cleaning time prior to the growth of SiGe in the S/D regions. The longer HF cleaning step created a recess into the buried oxide which allows SiGe to be grown below the base of the Si fin at the S/D regions, providing additional strain to the channel. Enhancement of device performance was also found to increase with the decrease of fin width and this benefit aggressively scaled tri-gate FinFET for advance technology node. © 2008 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/56837||ISSN:||00214922||DOI:||10.1143/JJAP.47.2589|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 1, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.