Full Name
Yu Hongyu
(not current staff)
Yu, H.Y.
Yu, H.

Results 1-20 of 32 (Search time: 0.008 seconds).

Issue DateTitleAuthor(s)
1Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
22004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
31-Mar-2003Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectricJoo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.
4Nov-2004Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetimeLi, M.F. ; Chen, G.; Shen, C.; Wang, X.P.; Yu, H.Y. ; Yeo, Y.-C. ; Kwong, D.L.
58-Jul-2002Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) SiYu, H.Y. ; Li, M.F. ; Cho, B.J. ; Yeo, C.C.; Joo, M.S. ; Kwong, D.-L.; Pan, J.S.; Ang, C.H.; Zheng, J.Z.; Ramanathan, S.
6May-2004Fermi pinning-induced thermal instability of metal-gate work functionsYu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
7Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
82004Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETsShen, C.; Yu, H.Y. ; Wang, X.P.; Li, M.-F. ; Yeo, Y.-C. ; Chan, D.S.H. ; Bera, K.L.; Kwong, D.L.
9Oct-2004HfO2 gate dielectrics for future generation of CMOS device applicationYu, H.Y. ; Kang, J.F.; Ren, C.; Li, M.F. ; Kwong, D.L.
10May-2002Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETsYu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
11May-2002Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETsYu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
12Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
13Jul-2002Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETsYu, H. ; Hou, Y.-T. ; Li, M.-F. ; Kwong, D.-L.
14Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
1517-Mar-2009Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFETYU, HONGYU ; JINGDE, CHEN ; MINGFU, LI ; KWONG, DIM-LEE ; BIESEMANS, SERGE; KITTL, JORGE ADRIAN
16Feb-2003Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Kwong, D.-L.
172004Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsShen, C.; Li, M.F. ; Wang, X.P.; Yu, H.Y. ; Feng, Y.P. ; Lim, A.T.-L. ; Yeo, Y.C. ; Chan, D.S.H. ; Kwong, D.L.
18Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
1928-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
202002Quantum tunneling and scalability of HfO2 and HfAlO gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Jin, Y.; Kwong, D.-L.