Please use this identifier to cite or link to this item:
|Title:||Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks||Authors:||Hou, Y.T.
High-k gate dielectric stacks
|Issue Date:||Feb-2003||Citation:||Hou, Y.T., Li, M.F., Yu, H.Y., Kwong, D.-L. (2003-02). Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks. IEEE Electron Device Letters 24 (2) : 96-98. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807708||Abstract:||We present a physical modeling of tunneling currents through ultrathin high-k gate stacks, which includes an ultrathin interface layer, both electron and hole quantization in the substrate and gate electrode, and energy band offsets between high-k dielectrics and Si determined from high-resolution XPS. Excellent agreements between simulated and experimentally measured tunneling currents have been obtained for chemical vapor deposited and physical vapor deposited HfO2 with and without NH3-based Interface layers, and ALD Al2O3 gate stacks with different EOT and bias polarities. This model is applied to more thermally stable (HfO2)x(Al2O3)1-x gate stacks in order to project their scalability for future CMOS applications.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80738||ISSN:||07413106||DOI:||10.1109/LED.2002.807708|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.