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|Title:||Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks|
|Authors:||Hou, Y.T. |
High-k gate dielectric stacks
|Citation:||Hou, Y.T., Li, M.F., Yu, H.Y., Kwong, D.-L. (2003-02). Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks. IEEE Electron Device Letters 24 (2) : 96-98. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.807708|
|Abstract:||We present a physical modeling of tunneling currents through ultrathin high-k gate stacks, which includes an ultrathin interface layer, both electron and hole quantization in the substrate and gate electrode, and energy band offsets between high-k dielectrics and Si determined from high-resolution XPS. Excellent agreements between simulated and experimentally measured tunneling currents have been obtained for chemical vapor deposited and physical vapor deposited HfO2 with and without NH3-based Interface layers, and ALD Al2O3 gate stacks with different EOT and bias polarities. This model is applied to more thermally stable (HfO2)x(Al2O3)1-x gate stacks in order to project their scalability for future CMOS applications.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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