Yu Hongyu

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Full Name

Yu Hongyu

(not current staff)

Variants

Yu, H.Y.
YU, HONGYU
Yu, H.

Main Affiliation

ELECTRICAL AND COMPUTER ENGINEERING

Faculty

FAC OF ENGINEERING

eleyhy@nus.edu.sg

Results 1-6 of 6 (Search time: 0.008 seconds).

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	Issue Date	Title	Author(s)
1	May-2004	Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode	Zhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
2	Apr-2003	Physical and electrical characteristics of HfN gate electrode for advanced MOS devices	Yu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
3	May-2002	Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs	Yu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
4	May-2002	Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs	Yu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
5	May-2004	Fermi pinning-induced thermal instability of metal-gate work functions	Yu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
6	1-Mar-2003	Dependence of chemical composition ratio on electrical properties of HfO2-Al2O3 gate dielectric	Joo, M.S. ; Cho, B.J. ; Yeo, C.C.; Wu, N.; Yu, H. ; Zhu, C. ; Li, M.F. ; Kwong, D.-L.; Balasubramanian, N.