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|Title:||Quantum tunneling and scalability of HfO2 and HfAlO gate stacks||Authors:||Hou, Y.T.
|Issue Date:||2002||Citation:||Hou, Y.T.,Li, M.F.,Yu, H.Y.,Jin, Y.,Kwong, D.-L. (2002). Quantum tunneling and scalability of HfO2 and HfAlO gate stacks. Technical Digest - International Electron Devices Meeting : 731-734. ScholarBank@NUS Repository.||Abstract:||We present a physical model for tunneling current through high-κ gate stack including the ultra thin interfacial layer between high-κ and Si substrate. The energy band offsets of high-κ are determined by XPS. The accurate carrier quantization in the substrate or gate is found to play a more significant role in tunneling through high-κ dielectric than in SiO2. Excellent agreements between simulated and measured tunneling currents were achieved over several high-κ dielectrics with both poly-Si and metal gate electrodes. The model is also applied to analyze the scalability of HfO2 and HfAlO gate stacks in future CMOS technology.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/81694||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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