Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81694
Title: Quantum tunneling and scalability of HfO2 and HfAlO gate stacks
Authors: Hou, Y.T. 
Li, M.F. 
Yu, H.Y. 
Jin, Y.
Kwong, D.-L.
Issue Date: 2002
Citation: Hou, Y.T.,Li, M.F.,Yu, H.Y.,Jin, Y.,Kwong, D.-L. (2002). Quantum tunneling and scalability of HfO2 and HfAlO gate stacks. Technical Digest - International Electron Devices Meeting : 731-734. ScholarBank@NUS Repository.
Abstract: We present a physical model for tunneling current through high-κ gate stack including the ultra thin interfacial layer between high-κ and Si substrate. The energy band offsets of high-κ are determined by XPS. The accurate carrier quantization in the substrate or gate is found to play a more significant role in tunneling through high-κ dielectric than in SiO2. Excellent agreements between simulated and measured tunneling currents were achieved over several high-κ dielectrics with both poly-Si and metal gate electrodes. The model is also applied to analyze the scalability of HfO2 and HfAlO gate stacks in future CMOS technology.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/81694
ISSN: 01631918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

77
checked on Apr 12, 2021

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.