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|Title:||Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs||Authors:||Shen, C.
|Issue Date:||2004||Citation:||Shen, C.,Li, M.F.,Wang, X.P.,Yu, H.Y.,Feng, Y.P.,Lim, A.T.-L.,Yeo, Y.C.,Chan, D.S.H.,Kwong, D.L. (2004). Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 733-736. ScholarBank@NUS Repository.||Abstract:||We report for the first time the following new findings in charge trapping in HfO 2 gate dielectrics: 1) Using an ultrafast electronic method to measure the MOSFET V th, two different traps (fast and slow) are identified, each leading to charge trapping characteristics with different dependence on the frequency of dynamic stress. 2) First-principle calculation of oxygen vacancy related traps in HfO 2 reveals the negative U (-U) property of traps in the strongly ionized HfO 2 dielectric. Each trap can trap two electrons and lower the trap energy due to a large lattice relaxation. 3) A physic-based model for the frequency dependence of dynamic BTI is established. The BTI frequency dependence of the slow traps is explained by the -U property of these traps. Excellent agreement between the simulation and experimental data was achieved. © 2004 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/84003||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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