Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/84003
Title: Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs
Authors: Shen, C.
Li, M.F. 
Wang, X.P.
Yu, H.Y. 
Feng, Y.P. 
Lim, A.T.-L. 
Yeo, Y.C. 
Chan, D.S.H. 
Kwong, D.L.
Issue Date: 2004
Source: Shen, C.,Li, M.F.,Wang, X.P.,Yu, H.Y.,Feng, Y.P.,Lim, A.T.-L.,Yeo, Y.C.,Chan, D.S.H.,Kwong, D.L. (2004). Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs. Technical Digest - International Electron Devices Meeting, IEDM : 733-736. ScholarBank@NUS Repository.
Abstract: We report for the first time the following new findings in charge trapping in HfO 2 gate dielectrics: 1) Using an ultrafast electronic method to measure the MOSFET V th, two different traps (fast and slow) are identified, each leading to charge trapping characteristics with different dependence on the frequency of dynamic stress. 2) First-principle calculation of oxygen vacancy related traps in HfO 2 reveals the negative U (-U) property of traps in the strongly ionized HfO 2 dielectric. Each trap can trap two electrons and lower the trap energy due to a large lattice relaxation. 3) A physic-based model for the frequency dependence of dynamic BTI is established. The BTI frequency dependence of the slow traps is explained by the -U property of these traps. Excellent agreement between the simulation and experimental data was achieved. © 2004 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/84003
ISSN: 01631918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

24
checked on Feb 23, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.