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|Title:||Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric||Authors:||Shen, C.
|Issue Date:||28-Feb-2005||Citation:||Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L. (2005-02-28). Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric. Applied Physics Letters 86 (9) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1874312||Abstract:||In this letter, we report on a physical model to explain the frequency dependence of dynamic charge trapping in metal-oxide-semiconductor (MOS) transistors with ultrathin HfO 2 gate dielectrics. For transistors operating in a complementary MOS inverter circuit with a given gate voltage amplitude, we observed a reduction of charge trapping when the stress frequency is increased. This can be explained by the traps in the high-k HfO 2 dielectric have the property of negative-U centers. One trap can capture two electrons sequentially, and the trap energy is reduced as a result of lattice relaxation. Results of calculation using the model show excellent agreement with all experiment data. © 2005 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82908||ISSN:||00036951||DOI:||10.1063/1.1874312|
|Appears in Collections:||Staff Publications|
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