Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.1874312
Title: | Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric |
Authors: | Shen, C. Li, M.F. Yu, H.Y. Wang, X.P. Yeo, Y.-C. Chan, D.S.H. Kwong, D.-L. |
Issue Date: | 28-Feb-2005 |
Source: | Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L. (2005-02-28). Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric. Applied Physics Letters 86 (9) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1874312 |
Abstract: | In this letter, we report on a physical model to explain the frequency dependence of dynamic charge trapping in metal-oxide-semiconductor (MOS) transistors with ultrathin HfO 2 gate dielectrics. For transistors operating in a complementary MOS inverter circuit with a given gate voltage amplitude, we observed a reduction of charge trapping when the stress frequency is increased. This can be explained by the traps in the high-k HfO 2 dielectric have the property of negative-U centers. One trap can capture two electrons sequentially, and the trap energy is reduced as a result of lattice relaxation. Results of calculation using the model show excellent agreement with all experiment data. © 2005 American Institute of Physics. |
Source Title: | Applied Physics Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/82908 |
ISSN: | 00036951 |
DOI: | 10.1063/1.1874312 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
21
checked on Mar 6, 2018
WEB OF SCIENCETM
Citations
18
checked on Mar 6, 2018
Page view(s)
27
checked on Apr 20, 2018
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.