Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1874312
Title: Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
Authors: Shen, C.
Li, M.F. 
Yu, H.Y. 
Wang, X.P.
Yeo, Y.-C. 
Chan, D.S.H. 
Kwong, D.-L.
Issue Date: 28-Feb-2005
Citation: Shen, C., Li, M.F., Yu, H.Y., Wang, X.P., Yeo, Y.-C., Chan, D.S.H., Kwong, D.-L. (2005-02-28). Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric. Applied Physics Letters 86 (9) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1874312
Abstract: In this letter, we report on a physical model to explain the frequency dependence of dynamic charge trapping in metal-oxide-semiconductor (MOS) transistors with ultrathin HfO 2 gate dielectrics. For transistors operating in a complementary MOS inverter circuit with a given gate voltage amplitude, we observed a reduction of charge trapping when the stress frequency is increased. This can be explained by the traps in the high-k HfO 2 dielectric have the property of negative-U centers. One trap can capture two electrons sequentially, and the trap energy is reduced as a result of lattice relaxation. Results of calculation using the model show excellent agreement with all experiment data. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82908
ISSN: 00036951
DOI: 10.1063/1.1874312
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