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|Title:||Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs||Authors:||Yu, H.Y.
|Issue Date:||May-2002||Citation:||Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L. (2002-05). Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters 23 (5) : 285-287. ScholarBank@NUS Repository. https://doi.org/10.1109/55.998878||Abstract:||A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages (|V g| < 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with ∼33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/67962||ISSN:||07413106||DOI:||10.1109/55.998878|
|Appears in Collections:||Staff Publications|
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