Please use this identifier to cite or link to this item: https://doi.org/10.1109/55.998878
Title: Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs
Authors: Yu, H.Y. 
Hou, Y.T. 
Li, M.F. 
Kwong, D.-L.
Keywords: Dielectric films
Hole tunneling
MOSFETs
Oxynitride/oxide (N/O)
Silicon oxynitrides
Issue Date: May-2002
Source: Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L. (2002-05). Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters 23 (5) : 285-287. ScholarBank@NUS Repository. https://doi.org/10.1109/55.998878
Abstract: A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages (|V g| < 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with ∼33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/67962
ISSN: 07413106
DOI: 10.1109/55.998878
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