Please use this identifier to cite or link to this item:
|Title:||Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs|
|Authors:||Yu, H.Y. |
|Citation:||Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L. (2002-05). Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters 23 (5) : 285-287. ScholarBank@NUS Repository. https://doi.org/10.1109/55.998878|
|Abstract:||A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages (|V g| < 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with ∼33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 18, 2018
WEB OF SCIENCETM
checked on Oct 2, 2018
checked on Oct 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.