Please use this identifier to cite or link to this item:
https://doi.org/10.1109/55.998878
Title: | Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs |
Authors: | Yu, H.Y. Hou, Y.T. Li, M.F. Kwong, D.-L. |
Keywords: | Dielectric films Hole tunneling MOSFETs Oxynitride/oxide (N/O) Silicon oxynitrides |
Issue Date: | May-2002 |
Source: | Yu, H.Y., Hou, Y.T., Li, M.F., Kwong, D.-L. (2002-05). Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs. IEEE Electron Device Letters 23 (5) : 285-287. ScholarBank@NUS Repository. https://doi.org/10.1109/55.998878 |
Abstract: | A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages (|V g| < 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with ∼33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs. |
Source Title: | IEEE Electron Device Letters |
URI: | http://scholarbank.nus.edu.sg/handle/10635/67962 |
ISSN: | 07413106 |
DOI: | 10.1109/55.998878 |
Appears in Collections: | Staff Publications |
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