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https://scholarbank.nus.edu.sg/handle/10635/32777
Title: | Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET | Authors: | YU, HONGYU JINGDE, CHEN MINGFU, LI KWONG, DIM-LEE BIESEMANS, SERGE KITTL, JORGE ADRIAN |
Issue Date: | 17-Mar-2009 | Citation: | YU, HONGYU,JINGDE, CHEN,MINGFU, LI,KWONG, DIM-LEE,BIESEMANS, SERGE,KITTL, JORGE ADRIAN (2009-03-17). Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET. ScholarBank@NUS Repository. | Abstract: | Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV. | URI: | http://scholarbank.nus.edu.sg/handle/10635/32777 |
Appears in Collections: | Staff Publications |
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