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Title: Robust HfN Metal Gate Electrode for Advanced MOS Devices Application
Authors: Yu, H.Y. 
Lim, H.F. 
Chen, J.H. 
Li, M.F. 
Zhu, C.X. 
Kwong, D.-L.
Tung, C.H.
Bera, K.L.
Leo, C.J.
Issue Date: 2003
Citation: Yu, H.Y.,Lim, H.F.,Chen, J.H.,Li, M.F.,Zhu, C.X.,Kwong, D.-L.,Tung, C.H.,Bera, K.L.,Leo, C.J. (2003). Robust HfN Metal Gate Electrode for Advanced MOS Devices Application. Digest of Technical Papers - Symposium on VLSI Technology : 151-152. ScholarBank@NUS Repository.
Abstract: A comprehensive study of HfN metal gate electrode for advanced MOS devices application is presented for the first time. It is found that HfN is an excellent barrier against oxygen diffusion, has a midgap work function (4.65 eV) on SiO2, and exhibits superior thermal stability with underlying gate dielectric. Negligible degradation in EOT, work function, leakage current, and TDDB upon high-temperature treatments (up to 1000°C) has been observed in HfN gated MOS devices. These results suggest that HfN metal electrode is an ideal candidate for ultra thin body fully depleted SOI (FD-SOI) and symmetric double gate (SDG) MOS applications.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
ISSN: 07431562
Appears in Collections:Staff Publications

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