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|Title:||Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack||Authors:||Ren, C.
|Issue Date:||Mar-2004||Citation:||Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L. (2004-03). Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack. IEEE Electron Device Letters 25 (3) : 123-125. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824251||Abstract:||In this letter, we demonstrate for the first time that the Fermi-level pinning caused by the formation of Ta(N)-Si bonds at the TaN/SiO 2 interface is responsible for the thermal instability of the effective work function of TaN in TaN/SiO 2 devices after high temperature rapid thermal annealing (RTA). Because of weak charge transfer between Hf and Ta(N) and hence negligible pinning effect at the TaN/HfO 2 interface, the effective work function of TaN is significantly more thermally stable on HfO 2 than on SiO 2 dielectric during RTA. This finding provides a guideline for the work function tuning and the integration of metal gate with high-κ dielectric for advanced CMOS devices.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82355||ISSN:||07413106||DOI:||10.1109/LED.2004.824251|
|Appears in Collections:||Staff Publications|
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