Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.824251
Title: Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack
Authors: Ren, C.
Yu, H.Y. 
Kang, J.F. 
Hou, Y.T. 
Li, M.-F. 
Wang, W.D.
Chan, D.S.H. 
Kwong, D.-L.
Keywords: Fermi-level pinning
Metal gate
TaN
Work function
Issue Date: Mar-2004
Source: Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L. (2004-03). Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack. IEEE Electron Device Letters 25 (3) : 123-125. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824251
Abstract: In this letter, we demonstrate for the first time that the Fermi-level pinning caused by the formation of Ta(N)-Si bonds at the TaN/SiO 2 interface is responsible for the thermal instability of the effective work function of TaN in TaN/SiO 2 devices after high temperature rapid thermal annealing (RTA). Because of weak charge transfer between Hf and Ta(N) and hence negligible pinning effect at the TaN/HfO 2 interface, the effective work function of TaN is significantly more thermally stable on HfO 2 than on SiO 2 dielectric during RTA. This finding provides a guideline for the work function tuning and the integration of metal gate with high-κ dielectric for advanced CMOS devices.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82355
ISSN: 07413106
DOI: 10.1109/LED.2004.824251
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