Please use this identifier to cite or link to this item:
|Title:||Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack|
|Citation:||Ren, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L. (2004-03). Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack. IEEE Electron Device Letters 25 (3) : 123-125. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824251|
|Abstract:||In this letter, we demonstrate for the first time that the Fermi-level pinning caused by the formation of Ta(N)-Si bonds at the TaN/SiO 2 interface is responsible for the thermal instability of the effective work function of TaN in TaN/SiO 2 devices after high temperature rapid thermal annealing (RTA). Because of weak charge transfer between Hf and Ta(N) and hence negligible pinning effect at the TaN/HfO 2 interface, the effective work function of TaN is significantly more thermally stable on HfO 2 than on SiO 2 dielectric during RTA. This finding provides a guideline for the work function tuning and the integration of metal gate with high-κ dielectric for advanced CMOS devices.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 21, 2018
WEB OF SCIENCETM
checked on Jun 6, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.