Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.824251
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dc.titleFermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack
dc.contributor.authorRen, C.
dc.contributor.authorYu, H.Y.
dc.contributor.authorKang, J.F.
dc.contributor.authorHou, Y.T.
dc.contributor.authorLi, M.-F.
dc.contributor.authorWang, W.D.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:28:23Z
dc.date.available2014-10-07T04:28:23Z
dc.date.issued2004-03
dc.identifier.citationRen, C., Yu, H.Y., Kang, J.F., Hou, Y.T., Li, M.-F., Wang, W.D., Chan, D.S.H., Kwong, D.-L. (2004-03). Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate Stack. IEEE Electron Device Letters 25 (3) : 123-125. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.824251
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82355
dc.description.abstractIn this letter, we demonstrate for the first time that the Fermi-level pinning caused by the formation of Ta(N)-Si bonds at the TaN/SiO 2 interface is responsible for the thermal instability of the effective work function of TaN in TaN/SiO 2 devices after high temperature rapid thermal annealing (RTA). Because of weak charge transfer between Hf and Ta(N) and hence negligible pinning effect at the TaN/HfO 2 interface, the effective work function of TaN is significantly more thermally stable on HfO 2 than on SiO 2 dielectric during RTA. This finding provides a guideline for the work function tuning and the integration of metal gate with high-κ dielectric for advanced CMOS devices.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2004.824251
dc.sourceScopus
dc.subjectFermi-level pinning
dc.subjectMetal gate
dc.subjectTaN
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2004.824251
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue3
dc.description.page123-125
dc.description.codenEDLED
dc.identifier.isiut000189389600003
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