Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1492024

Title:	Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si
Authors:	Yu, H.Y. Li, M.F. Cho, B.J. Yeo, C.C. Joo, M.S. Kwong, D.-L. Pan, J.S. Ang, C.H. Zheng, J.Z. Ramanathan, S.
Issue Date:	8-Jul-2002
Citation:	Yu, H.Y., Li, M.F., Cho, B.J., Yeo, C.C., Joo, M.S., Kwong, D.-L., Pan, J.S., Ang, C.H., Zheng, J.Z., Ramanathan, S. (2002-07-08). Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si. Applied Physics Letters 81 (2) : 376-378. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1492024
Abstract:	High-resolution x-ray photoelectron spectroscopy (XPS) was applied to characterize the electronic structures for a series of high-k materials (HfO2)x(Al2O3)1-x grown on (100) Si substrate with different HfO2 mole fraction x. Al 2p, Hf 4f, O 1s core levels spectra, valence band spectra, and O 1s energy loss all show continuous changes with x in (HfO2)x(Al 2O3)1-x. These data are used to estimate the energy gap (Eg) for (HfO2)x(Al 2O3)1-x, the valence band offset (ΔE ν) and the conduction band offset (ΔEc) between (HfO2)x(Al2O3)1-x and the (100) Si substrate. Our XPS results demonstrate that the values of E g, ΔEν, and ΔEc for (HfO 2)x(Al2O3)1-x change linearly with x. © 2002 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82277
ISSN:	00036951
DOI:	10.1063/1.1492024
Appears in Collections:	Staff Publications

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