Please use this identifier to cite or link to this item:
Title: Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si
Authors: Yu, H.Y. 
Li, M.F. 
Cho, B.J. 
Yeo, C.C.
Joo, M.S. 
Kwong, D.-L.
Pan, J.S.
Ang, C.H.
Zheng, J.Z.
Ramanathan, S.
Issue Date: 8-Jul-2002
Citation: Yu, H.Y., Li, M.F., Cho, B.J., Yeo, C.C., Joo, M.S., Kwong, D.-L., Pan, J.S., Ang, C.H., Zheng, J.Z., Ramanathan, S. (2002-07-08). Energy gap and band alignment for (HfO2)x(Al 2O3)1-x on (100) Si. Applied Physics Letters 81 (2) : 376-378. ScholarBank@NUS Repository.
Abstract: High-resolution x-ray photoelectron spectroscopy (XPS) was applied to characterize the electronic structures for a series of high-k materials (HfO2)x(Al2O3)1-x grown on (100) Si substrate with different HfO2 mole fraction x. Al 2p, Hf 4f, O 1s core levels spectra, valence band spectra, and O 1s energy loss all show continuous changes with x in (HfO2)x(Al 2O3)1-x. These data are used to estimate the energy gap (Eg) for (HfO2)x(Al 2O3)1-x, the valence band offset (ΔE ν) and the conduction band offset (ΔEc) between (HfO2)x(Al2O3)1-x and the (100) Si substrate. Our XPS results demonstrate that the values of E g, ΔEν, and ΔEc for (HfO 2)x(Al2O3)1-x change linearly with x. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.1492024
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Nov 24, 2021


checked on Nov 24, 2021

Page view(s)

checked on Nov 18, 2021

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.