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|Title:||Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs||Authors:||Shen, C.
|Issue Date:||2004||Citation:||Shen, C.,Yu, H.Y.,Wang, X.P.,Li, M.-F.,Yeo, Y.-C.,Chan, D.S.H.,Bera, K.L.,Kwong, D.L. (2004). Frequency dependent dynamic charge trapping in HfO 2 and threshold voltage instability in MOSFETs. Annual Proceedings - Reliability Physics (Symposium) : 601-602. ScholarBank@NUS Repository.||Abstract:||In tills paper, we perform the first investigation of biased threshold voltage instability (BTI) in MOSFETs with MOCVD HfO 2 gate dielectrics under both static and dynamic stress. For an ac stress of a given gate voltage amplitude, we observed reduction of BTI degradation with an increase in stress frequency for both n- and p-MOSFETs. A physical model that accounts for two-step procedure of trap activation (de-activation) and carrier capture (emission) in the HfO 2 dielectric under stress is proposed. Simulation results based on the new model shows good agreement with all experiment data.||Source Title:||Annual Proceedings - Reliability Physics (Symposium)||URI:||http://scholarbank.nus.edu.sg/handle/10635/83747||ISSN:||00999512|
|Appears in Collections:||Staff Publications|
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