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|Title:||Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices||Authors:||Yu, H.Y.
|Issue Date:||2003||Citation:||Yu, H.Y.,Kang, J.F.,Chen, J.D.,Ren, C.,Hou, Y.T.,Whang, S.J.,Li, M.-F.,Chan, D.S.H.,Bera, K.L.,Tung, C.H.,Du, A.,Kwong, D.-L. (2003). Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices. Technical Digest - International Electron Devices Meeting : 99-102. ScholarBank@NUS Repository.||Abstract:||We report for the first time a thermally stable and high quality HfN/HfO 2 gate stack for advanced CMOS applications. Due to the superior oxygen diffusion barrier of HfN as well as the thermal stability of HfN/HfO 2 interface, the EOT of HfN/HfO 2 gate stack has been successfully scaled down to less than 10Å with excellent leakage, boron penetration immunity, and long-term reliability even after 1000°C RTA treatment for 20sec., without using surface nitridation prior to HfO 2 deposition. The mobility is improved significantly for devices without surface nitridation. Negligible change in both EOT and the work function of HfN/HfO 2 gate stack are observed after 1000°C RTA.||Source Title:||Technical Digest - International Electron Devices Meeting||URI:||http://scholarbank.nus.edu.sg/handle/10635/81781||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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