Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/81781
Title: Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices
Authors: Yu, H.Y. 
Kang, J.F. 
Chen, J.D. 
Ren, C.
Hou, Y.T. 
Whang, S.J. 
Li, M.-F. 
Chan, D.S.H. 
Bera, K.L.
Tung, C.H.
Du, A.
Kwong, D.-L.
Issue Date: 2003
Source: Yu, H.Y.,Kang, J.F.,Chen, J.D.,Ren, C.,Hou, Y.T.,Whang, S.J.,Li, M.-F.,Chan, D.S.H.,Bera, K.L.,Tung, C.H.,Du, A.,Kwong, D.-L. (2003). Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices. Technical Digest - International Electron Devices Meeting : 99-102. ScholarBank@NUS Repository.
Abstract: We report for the first time a thermally stable and high quality HfN/HfO 2 gate stack for advanced CMOS applications. Due to the superior oxygen diffusion barrier of HfN as well as the thermal stability of HfN/HfO 2 interface, the EOT of HfN/HfO 2 gate stack has been successfully scaled down to less than 10Å with excellent leakage, boron penetration immunity, and long-term reliability even after 1000°C RTA treatment for 20sec., without using surface nitridation prior to HfO 2 deposition. The mobility is improved significantly for devices without surface nitridation. Negligible change in both EOT and the work function of HfN/HfO 2 gate stack are observed after 1000°C RTA.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/81781
ISSN: 01631918
Appears in Collections:Staff Publications

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