1. ScholarBank@NUS

KWONG,DIM-LEE

rp04196

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
KWONG,DIM-LEE
Variants
Kwong, D.L.
Lee, K.D.
Kwong, D.-L.
KWONG DIM-LEE
 
Main Affiliation
 
Faculty
 
Email
elekdl@nus.edu.sg
 

Publications

Results 1-20 of 23 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
1May-2007Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germaniumBai, W.; Kwong, D.-L. 
22007Complementary metal-oxide-semiconductor compatible Al-catalyzed silicon nanowiresWhang, S.J. ; Lee, S.J. ; Yang, W.F.; Cho, B.J. ; Liew, Y.F. ; Kwong, D.L. 
32014Design and in vitro test of a differentially fed dual-band implantable antenna operating at MICS and ISM BandsDuan, Z.; Guo, Y.-X. ; Je, M.; Kwong, D.-L. 
42007Design of a bidirectional WDM module for multi-channel transceiversZhang, J.; Lim, T.G.; Li, J.; Ramana, P.V.; Ramkumar, V.M.; John, L.H.-S.; Hnin, W.Y.; Kwong, D.L. 
52012Differentially fed dual-band implantable antenna for biomedical applicationsDuan, Z.; Guo, Y.-X. ; Xue, R.-F.; Je, M.; Kwong, D.-L. 
625-Apr-2008Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reductionLim, A.E.-J.; Lee, R.T.P. ; Koh, A.T.Y.; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
72008Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectricsYang, J.-J.; Wang, X.-P.; Zhu, C.-X. ; Li, M.-F. ; Yu, H.-Y.; Loh, W.-Y.; Kwong, D.-L. 
82003HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC ApplicationsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A. ; Kwong, D.-L. 
92007Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G. ; Kwong, D.-L. ; Yeo, Y.-C. 
102007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
11Jan-2010Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platformAng, K.-W.; Liow, T.-Y.; Yu, M.-B.; Fang, Q.; Song, J.; Lo, G.-Q.; Kwong, D.-L. 
1215-Aug-2007Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
1315-Nov-2006Low work function metal alloyYU HONGYU; JINGDE CHEN N. ; MINGFU LI N. ; KWONG DIM-LEE ; BIESEMANS SERGE; KITTL JORGE ADRIAN
1413-Jun-2007Low work function metal alloyYU HONGYU; JINGDE CHEN ; MINGFU LI ; KWONG DIM-LEE ; BIESEMANS SERGE
152005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
16Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
172008Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stackLin, J.; Lee, S.; Oh, H.-J.; Yang, W.; Lo, G.Q.; Kwong, D.L. ; Chi, D.Z.
182008Si nanowire CMOS transistors and circuits by top-down technology approachBalasubramanian, N. ; Singh, N.; Rustogi, S.C.; Buddharaju, K.D. ; Fu, J.; Hui, Z.; Balakumar, S.; Agarwal, A.; Manhas, S.K.; Lo, G.Q.; Kwong, D.L. 
19Jan-2010Silicon modulators and germanium photodetectors on SOI: Monolithic integration, compatibility, and performance optimizationLiow, T.-Y.; Ang, K.-W.; Fang, Q.; Song, J.-F.; Xiong, Y.-Z.; Yu, M.-B.; Lo, G.-Q.; Kwong, D.-L. 
202008Taper couplers for coupling between laser and silicon waveguide with large allowable toleranceJing, Z.; Bihan, L.; Chandrappan, J.; Xin, Z.Q.; Ramana, P.V.; Prabhathan, P.; Shing, L.H.; Lee, K.D. ; Matham, M.V.