Please use this identifier to cite or link to this item:
|Title:||HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications||Authors:||Kim, S.J.
|Issue Date:||2003||Citation:||Kim, S.J.,Cho, B.J.,Li, M.-F.,Zhu, C.,Chin, A.,Kwong, D.-L. (2003). HfO2 and Lanthanide-doped HfO2 MIM Capacitors for RF/Mixed IC Applications. Digest of Technical Papers - Symposium on VLSI Technology : 77-78. ScholarBank@NUS Repository.||Abstract:||We demonstrate high quality HfO2metal-insulator-metal (MIM) capacitors with a high capacitance of 4.7 fF/cm2 and a leakage current density of less than 10-8 A/cm2, meeting ITRS requirement for analog precision capacitor applications. In addition, we demonstrate that doping HfO2 with Lanthanide (Tb) at an optimum concentration improves both voltage linearity and leakage current density of HfO2 MIM capacitor, allowing further reduction of insulator thickness and achieving a capacitance density of 13.3 fF/μm2 with leakage current meeting requirements for RF bypass capacitors applications. These values are superior to that reported in the literature, suggesting the potential use of these dielectrics for future RF/mixed signal IC applications.||Source Title:||Digest of Technical Papers - Symposium on VLSI Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83774||ISSN:||07431562|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 21, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.