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|Title:||Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction||Authors:||Lim, A.E.-J.
|Issue Date:||25-Apr-2008||Citation:||Lim, A.E.-J., Lee, R.T.P., Koh, A.T.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008-04-25). Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction. Japanese Journal of Applied Physics 47 (4 PART 2) : 2383-2387. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2383||Abstract:||In this paper, nickel-aluminum (Ni1-xAlx) alloys were employed for Al incorporation in nickel suicide (NiSi) and nickel germanide (NiGe) metal gates [denoted by Ni(Al)Si and Ni(Al)Ge, respectively] to achieve n-channel metal-oxide-semiconductor (NMOS) work function Φm tunability. A higher annealing temperature during gate formation was found to increase Al concentration at the gate/dielectric interface. The presence of low Φm Al at the gate/dielectric interface reduces the NiSi and NiGe Φm by ∼0.2 and ∼0.6eV, respectively. However, the saturation in both Ni(Al)Si and Ni(Al)Ge gate Φm at ∼4.4 eV is due to Fermi-pinning from the formation of interfacial Al2O 3 which prevented a further lowering in Φm to that of pure Al (∼4.1-4.3eV). © 2008 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82218||ISSN:||00214922||DOI:||10.1143/JJAP.47.2383|
|Appears in Collections:||Staff Publications|
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