Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.47.2383
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dc.titleEffectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorKoh, A.T.Y.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:26:46Z
dc.date.available2014-10-07T04:26:46Z
dc.date.issued2008-04-25
dc.identifier.citationLim, A.E.-J., Lee, R.T.P., Koh, A.T.Y., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2008-04-25). Effectiveness of aluminum incorporation in nickel silicide and nickel germanide metal gates for work function reduction. Japanese Journal of Applied Physics 47 (4 PART 2) : 2383-2387. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.47.2383
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82218
dc.description.abstractIn this paper, nickel-aluminum (Ni1-xAlx) alloys were employed for Al incorporation in nickel suicide (NiSi) and nickel germanide (NiGe) metal gates [denoted by Ni(Al)Si and Ni(Al)Ge, respectively] to achieve n-channel metal-oxide-semiconductor (NMOS) work function Φm tunability. A higher annealing temperature during gate formation was found to increase Al concentration at the gate/dielectric interface. The presence of low Φm Al at the gate/dielectric interface reduces the NiSi and NiGe Φm by ∼0.2 and ∼0.6eV, respectively. However, the saturation in both Ni(Al)Si and Ni(Al)Ge gate Φm at ∼4.4 eV is due to Fermi-pinning from the formation of interfacial Al2O 3 which prevented a further lowering in Φm to that of pure Al (∼4.1-4.3eV). © 2008 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.47.2383
dc.sourceScopus
dc.subjectAl
dc.subjectFully-germanided
dc.subjectFully-silicided
dc.subjectMetal gate
dc.subjectNiGe
dc.subjectNiSi
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.47.2383
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume47
dc.description.issue4 PART 2
dc.description.page2383-2387
dc.description.codenJAPND
dc.identifier.isiut000255449100010
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