Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2007.4422245
| Title: | Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers | Authors: | Lim, A.E.-J. Fang, W.-W. Liu, F. Lee, R.T.P. Samudra, G.S. Kwong, D.-L. Yeo, Y.-C. |
Issue Date: | 2007 | Citation: | Lim, A.E.-J.,Fang, W.-W.,Liu, F.,Lee, R.T.P.,Samudra, G.S.,Kwong, D.-L.,Yeo, Y.-C. (2007). Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422245 | Source Title: | 2007 International Semiconductor Device Research Symposium, ISDRS | URI: | http://scholarbank.nus.edu.sg/handle/10635/70646 | ISBN: | 1424418917 | DOI: | 10.1109/ISDRS.2007.4422245 |
| Appears in Collections: | Staff Publications |
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