Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2007.4422245
Title: Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers
Authors: Lim, A.E.-J.
Fang, W.-W.
Liu, F.
Lee, R.T.P. 
Samudra, G.S. 
Kwong, D.-L. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Lim, A.E.-J.,Fang, W.-W.,Liu, F.,Lee, R.T.P.,Samudra, G.S.,Kwong, D.-L.,Yeo, Y.-C. (2007). Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2007.4422245
Source Title: 2007 International Semiconductor Device Research Symposium, ISDRS
URI: http://scholarbank.nus.edu.sg/handle/10635/70646
ISBN: 1424418917
DOI: 10.1109/ISDRS.2007.4422245
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