Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2007.4422245
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dc.titleInterface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorFang, W.-W.
dc.contributor.authorLiu, F.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorKwong, D.-L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-19T03:14:32Z
dc.date.available2014-06-19T03:14:32Z
dc.date.issued2007
dc.identifier.citationLim, A.E.-J.,Fang, W.-W.,Liu, F.,Lee, R.T.P.,Samudra, G.S.,Kwong, D.-L.,Yeo, Y.-C. (2007). Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayers. 2007 International Semiconductor Device Research Symposium, ISDRS : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ISDRS.2007.4422245" target="_blank">https://doi.org/10.1109/ISDRS.2007.4422245</a>
dc.identifier.isbn1424418917
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70646
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ISDRS.2007.4422245
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/ISDRS.2007.4422245
dc.description.sourcetitle2007 International Semiconductor Device Research Symposium, ISDRS
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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