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|Title:||Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers||Authors:||Lim, A.E.-J.
|Issue Date:||2007||Citation:||Lim, A.E.-J., Fang, W.-W., Liu, F., Lee, R.T.P., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2007). Impact of interfacial dipole on effective work function of nickel fully silicided gate electrodes formed on rare-earth-based dielectric interlayers. Applied Physics Letters 91 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2803762||Abstract:||The mechanism underlying the modulation of nickel fully silicided (Ni-FUSI) gate work function m by rare-earth (RE)-based dielectric interlayers (RE: Y, Er, Dy, Tb, Yb, and La) was investigated. RE-O-Si bonding in these ultrathin (∼1 nm) interlayers induces highly polarized RE-O bonds at the gate/dielectric interface. The relative magnitude of the RE-O dipole was estimated from the product of the net electronegativity difference and the charge separation between the RE and O ions. Excellent correlation of the modulated Ni-FUSI m with the calculated dipole moment was shown. The proposed quantitative interfacial dipole model could be used for the selection of interlayer materials for further m optimization and precise control of threshold voltage in transistors. © 2007 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/56264||ISSN:||00036951||DOI:||10.1063/1.2803762|
|Appears in Collections:||Staff Publications|
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