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|Title:||Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics||Authors:||Yang, J.-J.
|Keywords:||Chemical vapor deposited (CVD)
Flatband voltage (Vfb)
Ni-based fully silicided (FUSI) gate
Physical vapor deposited (PVD)
|Issue Date:||2008||Citation:||Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L. (2008). Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics. IEEE Transactions on Electron Devices 55 (8) : 2238-2245. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.926581||Abstract:||For the first time, the effect of the poly-Si gate electrode deposition process on the electrical characteristics of Ni-based fully silicided/ HfO2 gate stacks is investigated. The flatband voltage Vfb of Ni2Si/HfO2(or Ni3Si/ HfO2) with a physical vapor deposited (PVD) Si electrode was found to significantly shift to the positive direction by 0.27 V (or 0.15 V), compared to the case with a chemical vapor deposited (CVD) Si electrode. On the contrary, the Vfb of NiSi/HfO2 with a PVD Si electrode slightly shifts to the negative direction from that with a CVD Si electrode ( ∼ 0.05 V). Further, La is incorporated into HfO2 to enhance the Vfb modulation of NiXSi gates with a PVD Si gate to near the conduction band edge of Si (∼4.0 eV). We believe that the Vfb shift of NiXSi/HfO2 is attributed to the release of Fermi-level pinning at the interface between the Si gate electrode and HfO2, arising from the different Si electrode formation process. © 2008 IEEE.||Source Title:||IEEE Transactions on Electron Devices||URI:||http://scholarbank.nus.edu.sg/handle/10635/82294||ISSN:||00189383||DOI:||10.1109/TED.2008.926581|
|Appears in Collections:||Staff Publications|
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