Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.926581
Title: Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
Authors: Yang, J.-J.
Wang, X.-P.
Zhu, C.-X. 
Li, M.-F. 
Yu, H.-Y.
Loh, W.-Y.
Kwong, D.-L. 
Keywords: Chemical vapor deposited (CVD)
Fermi-level pinning
Flatband voltage (Vfb)
HfLaO
HfO2
Ni-based fully silicided (FUSI) gate
Physical vapor deposited (PVD)
Issue Date: 2008
Citation: Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L. (2008). Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics. IEEE Transactions on Electron Devices 55 (8) : 2238-2245. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.926581
Abstract: For the first time, the effect of the poly-Si gate electrode deposition process on the electrical characteristics of Ni-based fully silicided/ HfO2 gate stacks is investigated. The flatband voltage Vfb of Ni2Si/HfO2(or Ni3Si/ HfO2) with a physical vapor deposited (PVD) Si electrode was found to significantly shift to the positive direction by 0.27 V (or 0.15 V), compared to the case with a chemical vapor deposited (CVD) Si electrode. On the contrary, the Vfb of NiSi/HfO2 with a PVD Si electrode slightly shifts to the negative direction from that with a CVD Si electrode ( ∼ 0.05 V). Further, La is incorporated into HfO2 to enhance the Vfb modulation of NiXSi gates with a PVD Si gate to near the conduction band edge of Si (∼4.0 eV). We believe that the Vfb shift of NiXSi/HfO2 is attributed to the release of Fermi-level pinning at the interface between the Si gate electrode and HfO2, arising from the different Si electrode formation process. © 2008 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/82294
ISSN: 00189383
DOI: 10.1109/TED.2008.926581
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