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|Title:||High quality single crystal Al-catalyzed Si nanowire||Authors:||Whang, S.J.
|Issue Date:||2007||Citation:||Whang, S.J.,Lee, S.J.,Yang, W.,Cho, B.J.,Liew, Y.F.,Li, K.,Bera, L.K.,Kwong, D.L. (2007). High quality single crystal Al-catalyzed Si nanowire. ECS Transactions 3 (30) : 9-13. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2789208||Abstract:||We report successful growth of high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid mechanism, having diameters ranging from 10 to 200nm and 15um of length. Critical issues such as the effects of surface oxidation of Al on the growth of Si nanowires and selective removal of metal catalyst were systematically studied. Results show that the growth of Si nanowire is strongly dependent on the surface oxidation of Al seeding layers. Use of Al catalyst for Si nanowire growth can minimize metal-contamination issues associated with the use of Au, a fast diffuser in Si, and therefore Al-catalyzed Si nanowires can easily be integrated into conventional complementary metal-oxide semiconductor process for future nanoelectronics applications. copyright The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/70469||ISBN:||9781604239089||ISSN:||19385862||DOI:||10.1149/1.2789208|
|Appears in Collections:||Staff Publications|
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