Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2789208
Title: High quality single crystal Al-catalyzed Si nanowire
Authors: Whang, S.J. 
Lee, S.J. 
Yang, W.
Cho, B.J. 
Liew, Y.F.
Li, K.
Bera, L.K.
Kwong, D.L.
Issue Date: 2007
Source: Whang, S.J.,Lee, S.J.,Yang, W.,Cho, B.J.,Liew, Y.F.,Li, K.,Bera, L.K.,Kwong, D.L. (2007). High quality single crystal Al-catalyzed Si nanowire. ECS Transactions 3 (30) : 9-13. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2789208
Abstract: We report successful growth of high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid mechanism, having diameters ranging from 10 to 200nm and 15um of length. Critical issues such as the effects of surface oxidation of Al on the growth of Si nanowires and selective removal of metal catalyst were systematically studied. Results show that the growth of Si nanowire is strongly dependent on the surface oxidation of Al seeding layers. Use of Al catalyst for Si nanowire growth can minimize metal-contamination issues associated with the use of Au, a fast diffuser in Si, and therefore Al-catalyzed Si nanowires can easily be integrated into conventional complementary metal-oxide semiconductor process for future nanoelectronics applications. copyright The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70469
ISBN: 9781604239089
ISSN: 19385862
DOI: 10.1149/1.2789208
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