Please use this identifier to cite or link to this item:
Title: Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires
Authors: Whang, S.J. 
Lee, S.J. 
Yang, W.F.
Zhu, H.C.
Gu, H.L.
Cho, B.J. 
Liew, Y.F. 
Issue Date: 2007
Citation: Whang, S.J.,Lee, S.J.,Yang, W.F.,Zhu, H.C.,Gu, H.L.,Cho, B.J.,Liew, Y.F. (2007). Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires. Materials Research Society Symposium Proceedings 1018 : 66-71. ScholarBank@NUS Repository.
Abstract: We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10-20 (Jin of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 °C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3x1022/cm3 of peak doping concentration. © 2007 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
ISBN: 9781605604251
ISSN: 02729172
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Oct 12, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.