Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties

Abstract

In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-x Gex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-x Gex nanowires. Fabricated phosphorus-doped Si1-x Gex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm Hf O2, TaNTa metal gate, and Pd source/drain electrode demonstrated enhancement mode p -MOS operation with Ion Ioff ∼ 104, subthreshold swing of ∼136 mV /decade, and small hysteresis of 90 mV. © 2007 American Institute of Physics.