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|Title:||Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties||Authors:||Whang, S.J.
|Issue Date:||2007||Citation:||Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Kwong, D.L. (2007). Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2772665||Abstract:||In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-x Gex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-x Gex nanowires. Fabricated phosphorus-doped Si1-x Gex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm Hf O2, TaNTa metal gate, and Pd source/drain electrode demonstrated enhancement mode p -MOS operation with Ion Ioff ∼ 104, subthreshold swing of ∼136 mV /decade, and small hysteresis of 90 mV. © 2007 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57547||ISSN:||00036951||DOI:||10.1063/1.2772665|
|Appears in Collections:||Staff Publications|
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