Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2772665
Title: Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties
Authors: Whang, S.J. 
Lee, S.J. 
Yang, W.F.
Cho, B.J. 
Kwong, D.L.
Issue Date: 2007
Source: Whang, S.J.,Lee, S.J.,Yang, W.F.,Cho, B.J.,Kwong, D.L. (2007). Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2772665
Abstract: In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-x Gex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-x Gex nanowires. Fabricated phosphorus-doped Si1-x Gex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm Hf O2, TaNTa metal gate, and Pd source/drain electrode demonstrated enhancement mode p -MOS operation with Ion Ioff ∼ 104, subthreshold swing of ∼136 mV /decade, and small hysteresis of 90 mV. © 2007 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/57547
ISSN: 00036951
DOI: 10.1063/1.2772665
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

22
checked on Dec 13, 2017

WEB OF SCIENCETM
Citations

20
checked on Nov 6, 2017

Page view(s)

39
checked on Dec 9, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.