Please use this identifier to cite or link to this item:
|Title:||Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties|
|Authors:||Whang, S.J. |
|Citation:||Whang, S.J., Lee, S.J., Yang, W.F., Cho, B.J., Kwong, D.L. (2007). Study on the synthesis of high quality single crystalline Si1-x Gex nanowire and its transport properties. Applied Physics Letters 91 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2772665|
|Abstract:||In this wok, the authors report a synthesis of high quality single crystalline homogeneous Si1-x Gex nanowires and investigate the effects of growth temperature on the microstructures, morphologies, and properties of Si1-x Gex nanowires. Fabricated phosphorus-doped Si1-x Gex nanowire metal-oxide-semiconductor (MOS) field effect transistor integrated with 5 nm Hf O2, TaNTa metal gate, and Pd source/drain electrode demonstrated enhancement mode p -MOS operation with Ion Ioff ∼ 104, subthreshold swing of ∼136 mV /decade, and small hysteresis of 90 mV. © 2007 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 20, 2018
WEB OF SCIENCETM
checked on Apr 16, 2018
checked on May 18, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.