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Title: Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
Authors: Zhu, S. 
Yu, H.Y. 
Whang, S.J. 
Chen, J.H. 
Shen, C.
Zhu, C. 
Lee, S.J. 
Li, M.F. 
Chan, D.S.H. 
Yoo, W.J. 
Du, A.
Tung, C.H. 
Singh, J.
Chin, A.
Kwong, D.L.
Keywords: High-κ
Metal gate
Issue Date: May-2004
Citation: Zhu, S., Yu, H.Y., Whang, S.J., Chen, J.H., Shen, C., Zhu, C., Lee, S.J., Li, M.F., Chan, D.S.H., Yoo, W.J., Du, A., Tung, C.H., Singh, J., Chin, A., Kwong, D.L. (2004-05). Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode. IEEE Electron Device Letters 25 (5) : 268-270. ScholarBank@NUS Repository.
Abstract: This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-κ gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi sourece/drain (S/D), excellent electrical performance of Ion/Ioff ∼ 107 - 108 and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, Ion/Ioff can reach ∼ 105 at Vds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-κ dielectric and metal-gate materials to be used in the future generation CMOS technology.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2004.826569
Appears in Collections:Staff Publications

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