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Cho Byung-Jin

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Results 101-120 of 144 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
101Sep-2004MOS Characteristics of synthesized HfAlON-HfO2 stack using AlN-HfO2Park, C.S. ; Cho, B.J. ; Kwong, D.-L.
2Apr-2008Multi-layer high-κ interpoly dielectric for floating gate flash memory devicesZhang, L.; He, W. ; Chan, D.S.H. ; Cho, B.J. 
32004Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimizationCho, B.J. ; Poon, D.; Tan, L.S. ; Bhat, M.; See, A.
4Mar-2003Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formationPoon, C.H.; Cho, B.J. ; Lu, Y.F. ; Bhat, M.; See, A.
52007Novel ZrO2/Si3N4 dual charge storage layer to form step-up potential wells for highly reliable multi-level cell applicationZhang, G.; Wan, S.H.; Bobade, S.M.; Lee, S.-H.; Cho, B.-J. ; Won, J.Y.
615-Sep-2004Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperaturesChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Song, W.D.; Dai, D.Y.
7Jul-2004Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide charge storage layerTan, Y.-N.; Chim, W.-K. ; Cho, B.J. ; Choi, W.-K. 
8Aug-2007P-Type floating gate for retention and P/E window improvement of flash memory devicesShen, C.; Pu, J. ; Li, M.-F. ; Cho, B.J. 
912-Aug-2002Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiationChen, X.Y.; Lu, Y.F. ; Cho, B.J. ; Zeng, Y.P.; Zeng, J.N. ; Wu, Y.H. 
102003Photoluminescence from Silicon Nanocrystals Formed by Pulsed-Laser DepositionChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Song, W.D. ; Hu, H.
111-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
121999Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV techniqueGuan, Hao; Li, M.F. ; Zhang, Yaohui ; Cho, B.J. ; Jie, B.B.; Xie, Joseph; Wang, J.L.F. ; Yen, Andrew C. ; Sheng, George T.T.; Dong, Zhong; Li, Weidan
132003Process optimization for multiple-pulses laser annealing for boron implanted silicon with germanium pre-amorphizationPoon, D.; Cho, B.J. ; Lu, Y.F. ; Tan, L.S. ; Bhat, M.; See, A.
14Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
151-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
161999Radiation-induced leakage current of ultra-thin gate oxide under X-ray lithography conditionsCho, Byung Jin ; Kim, Sun Jung ; Ling, C.H. ; Joo, Moon Sig ; Yeo, In Seok
17May-2004Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous siliconZeng, Y.P.; Lu, Y.F.; Shen, Z.X. ; Sun, W.X. ; Yu, T. ; Liu, L. ; Zeng, J.N. ; Cho, B.J. ; Poon, C.H.
182000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
19Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
20Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.